APTGT50DH170T APTGT50DH170T ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 75 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 312 w rbsoa reverse bias safe operating area t j = 125c 100a @ 1600v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. vbus q4 out2 out1 vbus sense cr3 0/vbus g4 e4 nt c2 q1 cr2 0/vbus sense nt c1 g1 e1 ntc2 out1 out2 vbus vbus sense e1 ntc1 e4 g4 0/vbus 0/vbus sense g1 v ces = 1700v i c = 50a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile asymmetrical - bridge trench + field stop igbt ? p ower module
APTGT50DH170T APTGT50DH170T ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 250 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 50a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 4400 c oes output capacitance 180 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 150 pf t d(on) tur n-o n delay ti me 370 t r rise time 40 t d(off) turn-off delay time 650 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 50a r g = 10 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 t d(off) turn-off delay time 800 t f fall time 300 ns e on turn-on switching energy 16 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 900v i c = 50a r g = 10 ? 15 mj diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 250 i rm maximum reverse leakage current v r =1700v t j = 125c 500 a i f(a v) maximum average forward current 50% duty cycle tc = 80c 50 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 50a t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 14 q rr reverse recovery charge i f = 50a v r = 900v di/dt =800a/s t j = 125c 23 c
APTGT50DH170T APTGT50DH170T ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 temperature sensor ntc (see application note apt0406 on www.advancedpower.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.4 r thjc junction to case diode 0.7 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 3400 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 1.5 4.7 n.m wt package weight 160 g package outline (dimensions in mm) t: thermistor temperature r t : thermistor value at t
APTGT50DH170T APTGT50DH170T ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 20 40 60 80 100 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 20 40 60 80 100 5678910111213 v ge (v) i c (a ) energy losses vs collector current eon eoff er er 0 10 20 30 40 50 0 20406080100 i c (a) e (mj) v ce = 900v v ge = 15v r g = 10 ? t j = 125c eon eoff er 0 10 20 30 40 50 0 1020304050607080 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 50a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =10 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT50DH170T APTGT50DH170T ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 10 20 30 40 50 60 70 80 90 100 00.511.522.53 v f (v) i c (a) hard switching zcs zvs 0 5 10 15 20 25 30 0 1020304050607080 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =10 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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